A CMOS-MEMS accelerometer with tri-axis sensing electrodes arrays

A 1 mG lateral CMOS-MEMS accelerometer

This paper reports a lateral CMOS-MEMS accelerometer with a measured noise floor of 1mG/ and a dynamic range larger than 13G. The accelerometer is fully compatible with conventional CMOS processes enabling the integration of most of the conditioning circuits. It is fabricated in a three metal layer 0.5μm CMOS process followed by a two-step dry etch release. An improved curl matching technique i...

A Monolithic Three-Axis Accelerometer with Wafer- Level Package by CMOS MEMS Process

This paper presents a monolithic three-axis accelerometer with wafer-level package by CMOS MEMS process. The compositions of the microstructure are selected from CMOS layers in order to suppress the in-plane and out-of-plane bending deflection caused by the residual stresses in multiple layers. A switched-capacitor sensing circuit with a trimming mechanism is used to amplify the capacitive sign...

CMOS BEOL-embedded z-axis accelerometer

ELECT A first reported complementary metal-oxide semiconductor (CMOS)integrated acceleration sensor obtained through isotropic inter-metal dielectric (IMD) etching of a back-end-of-line (BEOL) integrated circuit interconnection stack, without any additional substrate etching steps, is presented. The mechanical device composed of a CMOSprocess 8 μm-thick metal-via-metal stack of 135 μm diameter ...

Design and Simulation of A CMOS-MEMS Accelerometer

Design and Analysis of a Novel MEMS Dual Axis Accelerometer

Due to their small size, low weight, low cost and low energy consumption, MEMS (Microelectromechanical Systems) devices have achieved great commercial success in recent decades. MEMS accelerometers have been widely used in automobile airbag deployment systems, inertial navigations, etc. In this paper, the design and simulation of a novel bulk-micromachined capacitive MEMS dual axis acceleromete...